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IAUCN08S7L033ATMA1 Infineon Technologies
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IAUCN08S7L033ATMA1

MOSFETs OptiMOS 7 Power-Transistor
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 130A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 2V @ 48µA
Gate Charge (Qg) (Max) @ Vgs 57.6 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 3521 pF @ 40 V
FET Feature -
Power Dissipation (Max) 118W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-34
Package / Case 8-PowerTDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,762
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 26 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The IAUCN08S7L033ATMA1 from Infineon Technologies falls under the mosfets category. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 80 V, a current, continuous drain (id) @ 25°C of 130A (Tj), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 3.3mOhm @ 60A, 10V. This part has a typical lead time of 26 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IAUCN08S7L033ATMA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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