*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tj) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 9µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 701pF @ 25V |
| Power - Max | 41W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-57 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
9,787
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 182 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
IAUC45N04S6N070HATMA1 is a mosfets manufactured by Infineon Technologies. Notable characteristics of this part include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Half Bridge), a FET feature of -, a drain to source voltage of 40V, a current, continuous drain (id) @ 25°C of 45A (Tj) and a rds on (max) @ id, vgs of 7mOhm @ 22A, 10V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. You can source IAUC45N04S6N070HATMA1 through Simplytronix, with fast shipping and verified authenticity.
