*For representation only.
FS28MR12W1M1HB11HPSA1
Infineon Technologies
Active
Discrete Semiconductor Modules CoolSiC MOSFET sixpack module 1200 V
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 6 N-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 30A |
| Rds On (Max) @ Id, Vgs | 26.4mOhm @ 30A, 18V |
| Vgs(th) (Max) @ Id | 5.15V @ 12mA |
| Gate Charge (Qg) (Max) @ Vgs | 90nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 800V |
| Power - Max | 20mW |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-EASY1B |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 24 |
13,307
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Discrete Semiconductor Modules |
| RoHS | No |
| Lifecycle | |
| Lead Time | 140 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
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Product Overview
Infineon Technologies's FS28MR12W1M1HB11HPSA1 is a widely used discrete semiconductor modules in electronic designs. This component is defined by a technology of Silicon Carbide (SiC), a configuration of 6 N-Channel, a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 30A and a rds on (max) @ id, vgs of 26.4mOhm @ 30A, 18V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks FS28MR12W1M1HB11HPSA1 for same-day shipping with genuine parts guaranteed.
