*For representation only.
DF14MR12W1M1HFB67BPSA1
Infineon Technologies
Active
Discrete Semiconductor Modules Booster 1200 V CoolSiC MOSFET Module
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-EASY1B |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 24 |
14,017
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 140 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
The DF14MR12W1M1HFB67BPSA1 from Infineon Technologies falls under the discrete semiconductor modules category. Key specifications include a technology of Silicon Carbide (SiC) and a drain to source voltage of 1200V (1.2kV). This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. You can source DF14MR12W1M1HFB67BPSA1 through Simplytronix, with fast shipping and verified authenticity.
