*For representation only.
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 6 N-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 310A |
| Rds On (Max) @ Id, Vgs | 2.54mOhm @ 310A, 18V |
| Vgs(th) (Max) @ Id | 4.55V @ 120mA |
| Gate Charge (Qg) (Max) @ Vgs | 870nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 25900pF @ 750V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
📦
Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 6 |
6,831
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New at Mouser |
| Lead Time | 273 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
FS03MR12A7MA2BHPSA1 is a mosfet modules manufactured by Infineon Technologies. It features a technology of Silicon Carbide (SiC), a configuration of 6 N-Channel, a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 310A and a rds on (max) @ id, vgs of 2.54mOhm @ 310A, 18V. This part has a typical lead time of 273 Days from factory and ships with a full manufacturer datasheet available for download. You can source FS03MR12A7MA2BHPSA1 through Simplytronix, with fast shipping and verified authenticity.
