*For representation only.
Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 6 N-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 310A |
| Rds On (Max) @ Id, Vgs | 2.54mOhm @ 310A, 18V |
| Vgs(th) (Max) @ Id | 4.55V @ 120mA |
| Gate Charge (Qg) (Max) @ Vgs | 870nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 25900pF @ 750V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 6 |
9,995
In Stock
Packaging: Tray
✔ 24h Response
✔ Global Shipping
✔ Genuine Parts
✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request
click here to view sample report
Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Reported Lead Time | 39 Days (from factory) |
Documentation
Download Datasheet
Compliance & Export Information
| Country | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Product Overview
FS03MR12A7MA2BHPSA1 by Infineon Technologies is a mosfet modules designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
