*For representation only.
FS01MR08A8MA2CHPSA1
Infineon Technologies
Active
Discrete Semiconductor Modules HybridPACK Drive G2 module with SiC MOSFET
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 6 N-Channel (Phase Leg) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 750V |
| Current - Continuous Drain (Id) @ 25°C | 620A (Tj) |
| Rds On (Max) @ Id, Vgs | 1.69mOhm @ 620A, 18V |
| Vgs(th) (Max) @ Id | 4.55V @ 200mA |
| Gate Charge (Qg) (Max) @ Vgs | 1500nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 43000pF @ 470V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 6 |
3,052
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 273 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| ECCN | EAR99 |
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Product Overview
Infineon Technologies's FS01MR08A8MA2CHPSA1 is a widely used discrete semiconductor modules in electronic designs. Key specifications include a technology of Silicon Carbide (SiC), a configuration of 6 N-Channel (Phase Leg), a FET feature of -, a drain to source voltage of 750V, a current, continuous drain (id) @ 25°C of 620A (Tj) and a rds on (max) @ id, vgs of 1.69mOhm @ 620A, 18V. This part has a typical lead time of 273 Days from factory and ships with a full manufacturer datasheet available for download. Order FS01MR08A8MA2CHPSA1 from Simplytronix for authenticated stock and same-day order processing.
