*For representation only.
FF8MR12W1M1HB11BPSA1
Infineon Technologies
Active
Discrete Semiconductor Modules CoolSiC MOSFET half-bridge module 1200 V
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | - |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | - |
| Operating Temperature | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-EASY1B |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 24 |
8,086
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 140 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Infineon Technologies, the FF8MR12W1M1HB11BPSA1 is classified as a discrete semiconductor modules. It features a technology of Silicon Carbide (SiC), a configuration of -, a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of - and a rds on (max) @ id, vgs of -. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. You can source FF8MR12W1M1HB11BPSA1 through Simplytronix, with fast shipping and verified authenticity.
