*For representation only.
⚙
Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 375A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.83mOhm @ 375A, 15V |
| Vgs(th) (Max) @ Id | 5.15V @ 168mA |
| Gate Charge (Qg) (Max) @ Vgs | 1000nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 29800pF @ 25V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-62MM |
📦
Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 8 |
🔁
Alternate / Replacement Parts
| Alternate Packaging | |
| Suggested Replacement | FF2MR12KM1HPHPSA |
13,650
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
ℹ
Product Overview
Infineon Technologies's FF3MR12KM1PHOSA1 is a widely used mosfet modules in electronic designs. Notable characteristics of this part include a technology of Silicon Carbide (SiC), a configuration of 2 N-Channel (Half Bridge), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 375A (Tc) and a rds on (max) @ id, vgs of 2.83mOhm @ 375A, 15V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries FF3MR12KM1PHOSA1 in stock, backed by a genuine parts guarantee and quick dispatch.
