*For representation only.
FF2MR12W3M1HB11BPSA1
MOSFET Modules Half-bridge 1200 V CoolSiC MOSFET Easy Module
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Full Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 400A (Tj) |
| Rds On (Max) @ Id, Vgs | 2.27mOhm @ 400A, 18V |
| Vgs(th) (Max) @ Id | 5.15V @ 224mA |
| Gate Charge (Qg) (Max) @ Vgs | 1600nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 48400pF @ 800V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-EASY3B |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 8 |
13,800
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 70 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| USHTS | 8541290055 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Infineon Technologies, the FF2MR12W3M1HB11BPSA1 is classified as a mosfet modules. Notable characteristics of this part include a technology of Silicon Carbide (SiC), a configuration of 4 N-Channel (Full Bridge), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 400A (Tj) and a rds on (max) @ id, vgs of 2.27mOhm @ 400A, 18V. This part has a typical lead time of 70 Days from factory and ships with a full manufacturer datasheet available for download. You can source FF2MR12W3M1HB11BPSA1 through Simplytronix, with fast shipping and verified authenticity.
