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FF11MR12W2M1HB70BPSA1

MOSFET Modules EasyPACK module with CoolSiC Trench MOSFET
Technical Specifications
Technology Silicon Carbide (SiC)
Configuration 6 N-Channel (Phase Leg + Boost Chopper)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 75A (Tj)
Rds On (Max) @ Id, Vgs 10.8mOhm @ 75A, 18V
Vgs(th) (Max) @ Id 5.15V @ 30mA
Gate Charge (Qg) (Max) @ Vgs 223nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 800V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Product Attributes
Packaging Tray
Standard Pack Qty15
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,113
In Stock
Packaging: Tray
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✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFET Modules
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 56 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
Product Overview

FF11MR12W2M1HB70BPSA1 by Infineon Technologies is a mosfet modules designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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