*For representation only.
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 25A |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 15V |
| Vgs(th) (Max) @ Id | 5.5V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 620nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 800V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | AG-EASY1BM-2 |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 24 |
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Alternate / Replacement Parts
| Alternate Packaging | |
| Suggested Replacement | DF23MR12W1M1B11B |
9,806
Units In Stock
📦 Tray
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- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8542319090 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
DF23MR12W1M1B11BOMA1 is a mosfet modules manufactured by Infineon Technologies. This component is defined by a technology of Silicon Carbide (SiC), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 1200V (1.2kV), a current, continuous drain (id) @ 25°C of 25A and a rds on (max) @ id, vgs of 45mOhm @ 25A, 15V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order DF23MR12W1M1B11BOMA1 from Simplytronix for authenticated stock and same-day order processing.
