*For representation only.
Technical Specifications
| FET Type | N-Channel, Depletion Mode |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 21mA (Ta) |
| Rds On (Max) @ Id, Vgs | 500Ohm @ 16mA, 10V |
| Vgs(th) (Max) @ Id | 2.7V @ 8µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 21 pF @ 25 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT23-3-5 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
4,978
In Stock
Packaging: Reel
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Test Report Available Upon Request
click here to view sample report
Key Specifications
| Category | MOSFETs |
| RoHS | |
| Lifecycle | |
| Reported Lead Time | 70 Days (from factory) |
Documentation
Download Datasheet
Compliance & Export Information
| Country | Code |
|---|---|
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
Product Overview
BSS126IXTSA1 by Infineon Technologies is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
