| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 380µA |
| Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 372 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223-4 |
| Package / Case | TO-261-4, TO-261AA |
| Packaging | Reel |
| Standard Pack Qty | 1000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 8 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
The BSP322PH6327XTSA1 from Infineon Technologies falls under the mosfets category. Key specifications include a FET type of P-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 100 V, a current, continuous drain (id) @ 25°C of 1A (Tc), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 800mOhm @ 1A, 10V. This part has a typical lead time of 8 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks BSP322PH6327XTSA1 for same-day shipping with genuine parts guaranteed.