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BSP135H6327XTSA1 Infineon Technologies
*For representation only.

BSP135H6327XTSA1

MOSFETs N-Ch 600V 120mA SOT-223-3
Technical Specifications
FET Type N-Channel, Depletion Mode
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Rds On (Max) @ Id, Vgs 45Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id 1V @ 94µA
Gate Charge (Qg) (Max) @ Vgs 4.9 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 146 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging BSP135 H6327
Suggested Replacement
10,776
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 91 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The BSP135H6327XTSA1 from Infineon Technologies falls under the mosfets category. Key specifications include a FET type of N-Channel, Depletion Mode, a technology of MOSFET (Metal Oxide), a drain to source voltage of 600 V, a current, continuous drain (id) @ 25°C of 120mA (Ta), a drive voltage of 0V, 10V and a rds on (max) @ id, vgs of 45Ohm @ 120mA, 10V. This part has a typical lead time of 91 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries BSP135H6327XTSA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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