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BSD316SNH6327XTSA1 Infineon Technologies
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BSD316SNH6327XTSA1

MOSFETs SMALL SIGNAL N-CH
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id 2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 94 pF @ 15 V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-SOT363-PO
Package / Case 6-VSSOP, SC-88, SOT-363
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging BSD316SN H6327
Suggested Replacement
12,998
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle Not Recommended for New Designs
Lead Time 8 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541290000
USHTS 8541210095
JPHTS 8541290100
KRHTS 8541219000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

Infineon Technologies's BSD316SNH6327XTSA1 is a widely used mosfets in electronic designs. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 30 V, a current, continuous drain (id) @ 25°C of 1.4A (Ta), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 160mOhm @ 1.4A, 10V. This part has a typical lead time of 8 Days from factory and ships with a full manufacturer datasheet available for download. Order BSD316SNH6327XTSA1 from Simplytronix for authenticated stock and same-day order processing.

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