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BSC066N06NSATMA1 Infineon Technologies
*For representation only.

BSC066N06NSATMA1

MOSFETs IFX FET 60V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 6.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.3V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 30 V
Power Dissipation (Max) 2.5W (Ta), 46W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-6
Package / Case 8-PowerTDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging BSC066N06NS
Suggested Replacement
12,535
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 52 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

The BSC066N06NSATMA1 from Infineon Technologies falls under the mosfets category. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 60 V, a current, continuous drain (id) @ 25°C of 64A (Tc), a drive voltage of 6V, 10V and a rds on (max) @ id, vgs of 6.6mOhm @ 50A, 10V. This part has a typical lead time of 52 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries BSC066N06NSATMA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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