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BSC047N08NS3GATMA1 Infineon Technologies
*For representation only.

BSC047N08NS3GATMA1

MOSFETs N-Ch 80V 100A TDSON-8 OptiMOS 3
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 40 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging BSC047N08NS3 G
Suggested Replacement
7,973
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 16 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

The BSC047N08NS3GATMA1 from Infineon Technologies falls under the mosfets category. Notable characteristics of this part include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 80 V, a current, continuous drain (id) @ 25°C of 18A (Ta), 100A (Tc), a drive voltage of 6V, 10V and a rds on (max) @ id, vgs of 4.7mOhm @ 50A, 10V. This part has a typical lead time of 16 Days from factory and ships with a full manufacturer datasheet available for download. Order BSC047N08NS3GATMA1 from Simplytronix for authenticated stock and same-day order processing.

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