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BSC027N06LS5ATMA1 Infineon Technologies
*For representation only.

BSC027N06LS5ATMA1

MOSFETs DIFFERENTIATED MOSFETS
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.3V @ 49µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 30 V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-7
Package / Case 8-PowerTDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,894
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 52 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Manufactured by Infineon Technologies, the BSC027N06LS5ATMA1 is classified as a mosfets. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 60 V, a current, continuous drain (id) @ 25°C of 100A (Tc), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 2.7mOhm @ 50A, 10V. This part has a typical lead time of 52 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries BSC027N06LS5ATMA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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