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BSC014N04LSTATMA1 Infineon Technologies
*For representation only.

BSC014N04LSTATMA1

MOSFETs IFX FET 40V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 33A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6020 pF @ 20 V
FET Feature -
Power Dissipation (Max) 3W (Ta), 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8 FL
Package / Case 8-PowerTDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,657
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle Not Recommended for New Designs
Lead Time 52 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

The BSC014N04LSTATMA1 from Infineon Technologies falls under the mosfets category. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 40 V, a current, continuous drain (id) @ 25°C of 33A (Ta), 100A (Tc), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 1.4mOhm @ 50A, 10V. This part has a typical lead time of 52 Days from factory and ships with a full manufacturer datasheet available for download. Order BSC014N04LSTATMA1 from Simplytronix for authenticated stock and same-day order processing.

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