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BSC010NE2LSIATMA1 Infineon Technologies
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BSC010NE2LSIATMA1

Infineon Technologies Not For New Designs
MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 38A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.05mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 12 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 96W (Tc)
Operating Temperature -
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-7
Package / Case 8-PowerTDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging BSC010NE2LSI
Suggested Replacement
4,958
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle Not Recommended for New Designs
Lead Time 52 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The BSC010NE2LSIATMA1 from Infineon Technologies falls under the mosfets category. Notable characteristics of this part include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 25 V, a current, continuous drain (id) @ 25°C of 38A (Ta), 100A (Tc), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 1.05mOhm @ 30A, 10V. This part has a typical lead time of 52 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries BSC010NE2LSIATMA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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