*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 160A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 80A, 6V |
| Vgs(th) (Max) @ Id | 3V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 103 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 205W (Tc) |
| Operating Temperature | 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-220SM(W) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
13,553
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
Toshiba's TK1R4F04PB,LXGQ is a widely used mosfets in electronic designs. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 40 V, a current, continuous drain (id) @ 25°C of 160A (Ta), a drive voltage of 6V, 10V and a rds on (max) @ id, vgs of 1.9mOhm @ 80A, 6V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source TK1R4F04PB,LXGQ through Simplytronix, with fast shipping and verified authenticity.
