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T2N7002BK,LM Toshiba
*For representation only.

T2N7002BK,LM

Toshiba Active
MOSFETs Small Signal Mosfet
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V
Power Dissipation (Max) 320mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,604
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 175 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Manufactured by Toshiba, the T2N7002BK,LM is classified as a mosfets. Notable characteristics of this part include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 60 V, a current, continuous drain (id) @ 25°C of 400mA (Ta), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 1.5Ohm @ 100mA, 10V. This part has a typical lead time of 175 Days from factory and ships with a full manufacturer datasheet available for download. Order T2N7002BK,LM from Simplytronix for authenticated stock and same-day order processing.

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