*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 17.8mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 797 pF @ 20 V |
| Power Dissipation (Max) | 1.84W (Ta) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Supplier Device Package | DFN2020B |
| Package / Case | 6-UDFN Exposed Pad |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
5,305
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 112 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
The XSM6K519NW,LXHF from Toshiba falls under the mosfets category. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 40 V, a current, continuous drain (id) @ 25°C of 8A (Ta), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 17.8mOhm @ 4A, 10V. This part has a typical lead time of 112 Days from factory. You can source XSM6K519NW,LXHF through Simplytronix, with fast shipping and verified authenticity.
