*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 10V |
| Power - Max | 1W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Supplier Device Package | 6-µDFN (2x2) |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
3,776
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 96 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541210000 |
| USHTS | 8541290065 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Toshiba, the SSM6N57NU,LF is classified as a mosfets. Notable characteristics of this part include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 30V, a current, continuous drain (id) @ 25°C of 4A and a rds on (max) @ id, vgs of 46mOhm @ 2A, 4.5V. This part has a typical lead time of 96 Days from factory and ships with a full manufacturer datasheet available for download. You can source SSM6N57NU,LF through Simplytronix, with fast shipping and verified authenticity.
