*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate, 1.5V Drive |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Rds On (Max) @ Id, Vgs | 630mOhm @ 200mA, 5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.23nC @ 4V |
| Input Capacitance (Ciss) (Max) @ Vds | 46pF @ 10V |
| Power - Max | 500mW (Ta) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Supplier Device Package | UF6 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
5,834
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 131 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Toshiba, the SSM6N36TU,LF is classified as a mosfets. Key specifications include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of Logic Level Gate, 1.5V Drive, a drain to source voltage of 20V, a current, continuous drain (id) @ 25°C of 500mA (Ta) and a rds on (max) @ id, vgs of 630mOhm @ 200mA, 5V. This part has a typical lead time of 131 Days from factory and ships with a full manufacturer datasheet available for download. Order SSM6N36TU,LF from Simplytronix for authenticated stock and same-day order processing.
