*For representation only.
⚙
Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 10mA, 4V |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 13.5pF @ 3V |
| Power - Max | 150mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 4000 |
3,975
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 109 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
ℹ
Product Overview
The SSM6N15AFE,LM from Toshiba falls under the mosfets category. This component is defined by a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of Logic Level Gate, a drain to source voltage of 30V, a current, continuous drain (id) @ 25°C of 100mA and a rds on (max) @ id, vgs of 4Ohm @ 10mA, 4V. This part has a typical lead time of 109 Days from factory and ships with a full manufacturer datasheet available for download. You can source SSM6N15AFE,LM through Simplytronix, with fast shipping and verified authenticity.
