*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate, 4V Drive |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta), 1.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA, 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 5.1nC @ 10V, 2.9nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 15V, 120pF @ 15V |
| Power - Max | 500mW (Ta) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Supplier Device Package | UF6 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
6,402
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
Toshiba's SSM6L40TU,LF is a widely used mosfets in electronic designs. It features a technology of MOSFET (Metal Oxide), a configuration of N and P-Channel, a FET feature of Logic Level Gate, 4V Drive, a drain to source voltage of 30V, a current, continuous drain (id) @ 25°C of 1.6A (Ta), 1.4A (Ta) and a rds on (max) @ id, vgs of 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks SSM6L40TU,LF for same-day shipping with genuine parts guaranteed.
