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SSM6K341NU,LF Toshiba
*For representation only.

SSM6K341NU,LF

MOSFETs LowON Res MOSFET ID=6A VDSS=100V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 36mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 10 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature 150°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 6-UDFNB (2x2)
Package / Case 6-WDFN Exposed Pad
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,379
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Toshiba's SSM6K341NU,LF is a widely used mosfets in electronic designs. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 60 V, a current, continuous drain (id) @ 25°C of 6A (Ta), a drive voltage of 4V, 10V and a rds on (max) @ id, vgs of 36mOhm @ 4A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order SSM6K341NU,LF from Simplytronix for authenticated stock and same-day order processing.

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