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SSM3K35AFS,LF

Toshiba Active
MOSFETs LowON Res MOSFET ID=.25A VDSS=20V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 1.1Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 0.34 nC @ 4.5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 36 pF @ 10 V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SSM
Package / Case SC-75, SOT-416
Product Attributes
Packaging Reel
Standard Pack Qty3000
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,329
In Stock
Packaging: Reel
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✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 99 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8541210000
CAHTS 8541290000
USHTS 8541210095
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

SSM3K35AFS,LF by Toshiba is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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