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SSM3K35AFS,LF Toshiba
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SSM3K35AFS,LF

Toshiba Active
MOSFETs LowON Res MOSFET ID=.25A VDSS=20V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 1.1Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 0.34 nC @ 4.5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 36 pF @ 10 V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SSM
Package / Case SC-75, SOT-416
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,329
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 99 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541290000
USHTS 8541210095
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

Toshiba's SSM3K35AFS,LF is a widely used mosfets in electronic designs. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 20 V, a current, continuous drain (id) @ 25°C of 250mA (Ta), a drive voltage of 1.2V, 4.5V and a rds on (max) @ id, vgs of 1.1Ohm @ 150mA, 4.5V. This part has a typical lead time of 99 Days from factory and ships with a full manufacturer datasheet available for download. Order SSM3K35AFS,LF from Simplytronix for authenticated stock and same-day order processing.

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