| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.35mOhm @ 10A, 4.5V |
| Vgs(th) (Max) @ Id | 1.4V @ 1.57mA |
| Gate Charge (Qg) (Max) @ Vgs | 76nC @ 4V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.33W (Ta) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Package / Case | 14-SMD, No Lead |
| Supplier Device Package | TCSPED-302701 |
| Packaging | Reel |
| Standard Pack Qty | 10000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Toshiba's SSM14N956L,EFF is a widely used mosfets in electronic designs. This component is defined by a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 12V, a current, continuous drain (id) @ 25°C of 20A (Ta) and a rds on (max) @ id, vgs of 1.35mOhm @ 10A, 4.5V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order SSM14N956L,EFF from Simplytronix for authenticated stock and same-day order processing.