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SSM14N956L,EFF Toshiba
*For representation only.

SSM14N956L,EFF

MOSFETs 12V Common Drain MOSFET Rss(on): 1.1mOhm
Technical Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Rds On (Max) @ Id, Vgs 1.35mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 1.57mA
Gate Charge (Qg) (Max) @ Vgs 76nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.33W (Ta)
Operating Temperature 150°C
Mounting Type Surface Mount
Package / Case 14-SMD, No Lead
Supplier Device Package TCSPED-302701
📦 Product Attributes
Packaging Reel
Standard Pack Qty 10000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,906
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Toshiba's SSM14N956L,EFF is a widely used mosfets in electronic designs. This component is defined by a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 12V, a current, continuous drain (id) @ 25°C of 20A (Ta) and a rds on (max) @ id, vgs of 1.35mOhm @ 10A, 4.5V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order SSM14N956L,EFF from Simplytronix for authenticated stock and same-day order processing.

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