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BD239C STMicroelectronics
*For representation only.

BD239C

Bipolar Transistors - BJT NPN Pwr Transistors
Technical Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 200mA, 1A
Current - Collector Cutoff (Max) 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A, 4V
Power - Max 2 W
Frequency - Transition -
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,874
Units In Stock
📦 Tube
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 98 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The BD239C from STMicroelectronics falls under the bipolar transistors - bjt category. This component is defined by a transistor type of NPN, a current, collector (ic) of 2 A, a voltage, collector emitter breakdown of 100 V, a vce saturation (max) @ ib, ic of 700mV @ 200mA, 1A, a current, collector cutoff of 300µA and a DC current gain (hfe) (min) @ ic, vce of 15 @ 1A, 4V. This part has a typical lead time of 98 Days from factory. Simplytronix stocks BD239C for same-day shipping with genuine parts guaranteed.

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