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MD2001FX STMicroelectronics
*For representation only.

MD2001FX

Bipolar Transistors - BJT NPN Power Transistor
Technical Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 12 A
Voltage - Collector Emitter Breakdown (Max) 700 V
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1.5A, 6A
Current - Collector Cutoff (Max) 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce 4.5 @ 6A, 5V
Power - Max 58 W
Frequency - Transition -
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case ISOWATT218FX
Supplier Device Package ISOWATT-218FX
📦 Product Attributes
Packaging Tube
Standard Pack Qty 300
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,951
Units In Stock
📦 Tube
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 98 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Product Overview

MD2001FX is a bipolar transistors - bjt manufactured by STMicroelectronics. This component is defined by a transistor type of NPN, a current, collector (ic) of 12 A, a voltage, collector emitter breakdown of 700 V, a vce saturation (max) @ ib, ic of 1.8V @ 1.5A, 6A, a current, collector cutoff of 200µA and a DC current gain (hfe) (min) @ ic, vce of 4.5 @ 6A, 5V. This part has a typical lead time of 98 Days from factory. You can source MD2001FX through Simplytronix, with fast shipping and verified authenticity.

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