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BU508AF STMicroelectronics
*For representation only.

BU508AF

Bipolar Transistors - BJT NPN Power Transistor
Technical Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 8 A
Voltage - Collector Emitter Breakdown (Max) 700 V
Vce Saturation (Max) @ Ib, Ic 1V @ 1.6A, 4.5A
Current - Collector Cutoff (Max) 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 100mA, 5V
Power - Max 50 W
Frequency - Transition -
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Supplier Device Package TO-3PF
📦 Product Attributes
Packaging Tube
Standard Pack Qty 300
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,659
Units In Stock
📦 Tube
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 98 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

BU508AF is a bipolar transistors - bjt manufactured by STMicroelectronics. Notable characteristics of this part include a transistor type of NPN, a current, collector (ic) of 8 A, a voltage, collector emitter breakdown of 700 V, a vce saturation (max) @ ib, ic of 1V @ 1.6A, 4.5A, a current, collector cutoff of 200µA and a DC current gain (hfe) (min) @ ic, vce of 10 @ 100mA, 5V. This part has a typical lead time of 98 Days from factory and ships with a full manufacturer datasheet available for download. Order BU508AF from Simplytronix for authenticated stock and same-day order processing.

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