*For representation only.
2N2222AUB1
STMicroelectronics
Active
Bipolar Transistors - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
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Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Power - Max | 500 mW |
| Frequency - Transition | - |
| Operating Temperature | 200°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Supplier Device Package | UB |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 1 |
8,193
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | Not Applicable |
| Lifecycle | |
| Lead Time | 364 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
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Product Overview
STMicroelectronics's 2N2222AUB1 is a widely used bipolar transistors - bjt in electronic designs. It features a transistor type of NPN, a current, collector (ic) of 800 mA, a voltage, collector emitter breakdown of 50 V, a vce saturation (max) @ ib, ic of 300mV @ 15mA, 150mA, a current, collector cutoff of 10nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 100 @ 150mA, 10V. This part has a typical lead time of 364 Days from factory. You can source 2N2222AUB1 through Simplytronix, with fast shipping and verified authenticity.
