| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 25V |
| Power - Max | 2W |
| Operating Temperature | 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
| Packaging | Reel |
| Standard Pack Qty | 2500 |
| Alternate Packaging | |
| Suggested Replacement | SP8K52HZGTB |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Reported Lead Time | 112 Days (from factory) |
| Country | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8542390000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| MXHTS | 8542399901 |
| ECCN | EAR99 |
SP8K52FRATB by ROHM Semiconductor is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
