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SP8K52FRATB

ROHM Semiconductor Not For New Designs
MOSFETs Nch+Nch 100V Vds 3A 0.135Rds(on) 8.5Qg
Technical Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Rds On (Max) @ Id, Vgs 170mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 610pF @ 25V
Power - Max 2W
Operating Temperature 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP
Product Attributes
Packaging Reel
Standard Pack Qty2500
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement SP8K52HZGTB
13,031
In Stock
Packaging: Reel
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✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHSRoHS Compliant
LifecycleNot Recommended for New Designs
Reported Lead Time 112 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
CNHTS 8541290000
CAHTS 8542390000
USHTS 8541290065
TARIC 8541290000
MXHTS 8542399901
ECCN EAR99
Product Overview

SP8K52FRATB by ROHM Semiconductor is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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