*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 650mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Rds On (Max) @ Id, Vgs | 680mOhm @ 650mA, 10V |
| Vgs(th) (Max) @ Id | 2V @ 10µA |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 47 pF @ 30 V |
| Power Dissipation (Max) | 200mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | SST3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
6,531
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 252 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
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Product Overview
BSS670AHZGT116 is a mosfets manufactured by ROHM Semiconductor. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 60 V, a current, continuous drain (id) @ 25°C of 650mA (Ta), a drive voltage of 2.5V, 10V and a rds on (max) @ id, vgs of 680mOhm @ 650mA, 10V. This part has a typical lead time of 252 Days from factory. Order BSS670AHZGT116 from Simplytronix for authenticated stock and same-day order processing.
