*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 25V |
| Power - Max | 1.4W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
11,984
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 112 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
ROHM Semiconductor's SH8K52GZETB is a widely used mosfets in electronic designs. It features a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 100V, a current, continuous drain (id) @ 25°C of 3A (Ta) and a rds on (max) @ id, vgs of 170mOhm @ 3A, 10V. This part has a typical lead time of 112 Days from factory. Order SH8K52GZETB from Simplytronix for authenticated stock and same-day order processing.
