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BSS123

MOSFETs
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14 pF @ 50 V
FET Feature -
Power Dissipation (Max) 350mW (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
📦 Product Attributes
Packaging
Standard Pack Qty
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,457
Units In Stock
📦
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🔑 Key Specifications
Category MOSFETs
RoHS
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
TARIC 8541290000
Product Overview

ROHM Semiconductor's BSS123 is a widely used mosfets in electronic designs. Notable characteristics of this part include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 100 V, a current, continuous drain (id) @ 25°C of 200mA (Ta), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 5Ohm @ 200mA, 10V. This part has a typical lead time of 0 Days from factory. You can source BSS123 through Simplytronix, with fast shipping and verified authenticity.

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