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SH8K37GZETB ROHM Semiconductor
*For representation only.

SH8K37GZETB

ROHM Semiconductor Not For New Designs
MOSFETs 60V Nch+Nch Power MOSFET
Technical Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 5.5A (Ta)
Rds On (Max) @ Id, Vgs 46mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 2.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 9.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 30V
Power - Max 1.4W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,879
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle Not Recommended for New Designs
Lead Time 112 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
Product Overview

The SH8K37GZETB from ROHM Semiconductor falls under the mosfets category. Key specifications include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 60V, a current, continuous drain (id) @ 25°C of 5.5A (Ta) and a rds on (max) @ id, vgs of 46mOhm @ 5.5A, 10V. This part has a typical lead time of 112 Days from factory. You can source SH8K37GZETB through Simplytronix, with fast shipping and verified authenticity.

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