*For representation only.
RS1E260ATTB1
ROHM Semiconductor
Active
MOSFETs Transistor, MOSFET Pch, -30V(Vdss), -26.0A(Id), (4.5V, 6.0V Drive)
⚙
Technical Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 26A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 175 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7850 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-HSOP |
| Package / Case | 8-PowerTDFN |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
5,878
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
ROHM Semiconductor's RS1E260ATTB1 is a widely used mosfets in electronic designs. Key specifications include a FET type of P-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 30 V, a current, continuous drain (id) @ 25°C of 26A (Ta), 80A (Tc), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 3.1mOhm @ 26A, 10V. This part has a typical lead time of 126 Days from factory. Simplytronix carries RS1E260ATTB1 in stock, backed by a genuine parts guarantee and quick dispatch.
