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RQ3E180AJTB ROHM Semiconductor
*For representation only.

RQ3E180AJTB

MOSFETs Transistor, MOSFET Nch, 30V(Vdss), 18.0A(Id), (2.5V Drive)
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 4290 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 30W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-HSMT (3.2x3)
Package / Case 8-PowerVDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,186
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 112 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

ROHM Semiconductor's RQ3E180AJTB is a widely used mosfets in electronic designs. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 30 V, a current, continuous drain (id) @ 25°C of 18A (Ta), 30A (Tc), a drive voltage of 2.5V, 4.5V and a rds on (max) @ id, vgs of 4.5mOhm @ 18A, 4.5V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Order RQ3E180AJTB from Simplytronix for authenticated stock and same-day order processing.

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