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RHU002N06T106 ROHM Semiconductor
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RHU002N06T106

ROHM Semiconductor Not For New Designs
MOSFETs N-CH 60V 200MA SOT-323
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 2.4Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 4.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 15 pF @ 10 V
FET Feature -
Power Dissipation (Max) 200mW (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package UMT3
Package / Case SC-70, SOT-323
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement BSS138BKWT106
8,002
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle Not Recommended for New Designs
Lead Time 112 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541290000
USHTS 8541210095
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

Manufactured by ROHM Semiconductor, the RHU002N06T106 is classified as a mosfets. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 60 V, a current, continuous drain (id) @ 25°C of 200mA (Ta), a drive voltage of 4V, 10V and a rds on (max) @ id, vgs of 2.4Ohm @ 200mA, 10V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries RHU002N06T106 in stock, backed by a genuine parts guarantee and quick dispatch.

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