*For representation only.
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 76A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 44.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 2.96mA |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6500 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 735W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-3 |
📦
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 600 |
10,539
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 140 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
Manufactured by ROHM Semiconductor, the R6576ENZ4C13 is classified as a mosfets. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 76A (Ta), a drive voltage of 10V and a rds on (max) @ id, vgs of 46mOhm @ 44.4A, 10V. This part has a typical lead time of 140 Days from factory. You can source R6576ENZ4C13 through Simplytronix, with fast shipping and verified authenticity.
