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R6061YNXC7G ROHM Semiconductor
*For representation only.

R6061YNXC7G

MOSFETs Nch 600V 26A, TO-220FM, Power MOSFET: R6061YNX is a power MOSFET with Low on - resistance, suitable for switching.
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V, 12V
Rds On (Max) @ Id, Vgs 60mOhm @ 13A, 12V
Vgs(th) (Max) @ Id 6V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 100 V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220FM
Package / Case TO-220-3 Full Pack
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,896
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 161 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
Product Overview

R6061YNXC7G is a mosfets manufactured by ROHM Semiconductor. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 600 V, a current, continuous drain (id) @ 25°C of 26A (Tc), a drive voltage of 10V, 12V and a rds on (max) @ id, vgs of 60mOhm @ 13A, 12V. This part has a typical lead time of 161 Days from factory. You can source R6061YNXC7G through Simplytronix, with fast shipping and verified authenticity.

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