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R6047ENZ4C13 ROHM Semiconductor
*For representation only.

R6047ENZ4C13

MOSFETs Transistor MOSFET, Nch 600V 47A 3rd Gen, Low Noise
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 25.8A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3850 pF @ 25 V
FET Feature -
Power Dissipation (Max) 481W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 600
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,448
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 140 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
Product Overview

The R6047ENZ4C13 from ROHM Semiconductor falls under the mosfets category. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 600 V, a current, continuous drain (id) @ 25°C of 47A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 72mOhm @ 25.8A, 10V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. You can source R6047ENZ4C13 through Simplytronix, with fast shipping and verified authenticity.

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