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R6020FNJTL ROHM Semiconductor
*For representation only.

R6020FNJTL

ROHM Semiconductor Not For New Designs
MOSFETs Transistor MOSFET, Nch 600V 20A
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 25 V
FET Feature -
Power Dissipation (Max) 304W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package LPTS
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement R6020JNJGTL
11,271
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS
Lifecycle Not Recommended for New Designs
Lead Time 161 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

The R6020FNJTL from ROHM Semiconductor falls under the mosfets category. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 600 V, a current, continuous drain (id) @ 25°C of 20A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 280mOhm @ 10A, 10V. This part has a typical lead time of 161 Days from factory. Order R6020FNJTL from Simplytronix for authenticated stock and same-day order processing.

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