*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta), 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 214mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 6.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 315pF @ 75V |
| Power - Max | 2W (Ta), 14W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-HSMT (3.2x3) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
10,777
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 126 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
ROHM Semiconductor's HT8KF6HTB1 is a widely used mosfets in electronic designs. It features a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 150V, a current, continuous drain (id) @ 25°C of 2.5A (Ta), 7A (Tc) and a rds on (max) @ id, vgs of 214mOhm @ 2.5A, 10V. This part has a typical lead time of 126 Days from factory. You can source HT8KF6HTB1 through Simplytronix, with fast shipping and verified authenticity.
