*For representation only.
HT8KE6TB1
ROHM Semiconductor
Active
MOSFETs 100V 13A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KE6 is a low on-resistance MOSFET ideal for switching applications.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta), 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 305pF @ 50V |
| Power - Max | 2W (Ta), 14W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-HSMT (3.2x3) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
14,211
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
The HT8KE6TB1 from ROHM Semiconductor falls under the mosfets category. It features a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 100V, a current, continuous drain (id) @ 25°C of 4.5A (Ta), 13A (Tc) and a rds on (max) @ id, vgs of 57mOhm @ 4.5A, 10V. This part has a typical lead time of 126 Days from factory. Simplytronix carries HT8KE6TB1 in stock, backed by a genuine parts guarantee and quick dispatch.
