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EM6K6T2R

MOSFETs Small Signal Dual N-CH 20V .3A .15W
Technical Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 300mA
Rds On (Max) @ Id, Vgs 1Ohm @ 300mA, 4V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 25pF @ 10V
Power - Max 150mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package EMT6
Product Attributes
Packaging Reel
Standard Pack Qty8000
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,581
In Stock
Packaging: Reel
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✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 168 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
KRHTS 8541299000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
Product Overview

EM6K6T2R by ROHM Semiconductor is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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