*For representation only.
BSM600C12P3G201
ROHM Semiconductor
Not For New Designs
Discrete Semiconductor Modules 1200V Vdss; 576A ID SiC Mod; SICSTD02
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 600A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 5.6V @ 182mA |
| Vgs (Max) | +22V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 28000 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 2460W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Supplier Device Package | Module |
| Package / Case | Module |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 4 |
6,986
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Discrete Semiconductor Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| ECCN | EAR99 |
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Product Overview
BSM600C12P3G201 is a discrete semiconductor modules manufactured by ROHM Semiconductor. Notable characteristics of this part include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 600A (Tc), a drive voltage of - and a rds on (max) @ id, vgs of -. This part has a typical lead time of 0 Days from factory. Simplytronix stocks BSM600C12P3G201 for same-day shipping with genuine parts guaranteed.
